2N2907 PNP Transistor Description

The 2N2907 is a popular PNP bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is commonly used in complementary amplifier circuits together with its NPN counterpart, the 2N2222.

Features / Specifications

• Transistor Type: BJTs – Bipolar Junction Transistor
• Transistor Polarity: PNP
• Collector-Emitter Voltage (VCEO) Max: 40 V
• Collector-Base Voltage (VCBO): 60 V
• Emitter-Base Voltage (VEBO): 5 V
• Collector Current (IC) Max Continuous: 600 mA
• Collector Dissipation (Power Dissipation) (Pd): 625 mW
• Transition Frequency (fT): 100 MHz (typical)
• Gain Bandwidth Product: Medium power and frequency response
• Package Type: TO-18 Metal Can
• Operating Junction Temperature: -65°C to +150°C

Applications

• Low noise stages in audio amplifiers
• Switching and amplification in general purpose circuits
• Complementary output stages in Class AB amplifiers
• Darlington pair configurations
• Driver stages for relays, solenoids, and other loads

For detailed technical information, electrical characteristics and pin configuration, refer to the official datasheet:

2N2907 Datasheet