2N5551 Transistor Description

The 2N5551 is a high voltage, low noise NPN bipolar junction transistor designed primarily for use in amplification and switching applications. It is often used in high voltage amplifiers, audio circuits, and signal processing due to its high collector-emitter voltage rating and low noise characteristics.

Features / Specifications

• Transistor Type: Bipolar Junction Transistor (BJT)
• Transistor Polarity: NPN
• Collector-Emitter Voltage (VCEO) Max: 160 V
• Collector-Base Voltage (VCBO) Max: 180 V
• Emitter-Base Voltage (VEBO) Max: 5 V
• Collector Current (IC) Max: 600 mA
• Collector-Emitter Saturation Voltage (VCE(sat)) Max: 1.5 V
• Power Dissipation (Pd): 625 mW
• Gain Bandwidth Product (fT): 100 MHz
• Maximum Operating Temperature: 150 °C
• Package: TO-92

Applications

• High Voltage Amplifiers
• Audio Amplifiers
• Switching Circuits
• Signal Processing Circuits
• Driver Circuits

For detailed technical information, you can download the datasheet here: 2N5551 Datasheet .